Semiconductor device with linerless contacts

ABSTRACT

Semiconductor devices and methods for forming semiconductor devices include opening at least one contact via through a sacrificial material down to contacts. Sides of the at least one contact via are lined by selectively depositing a barrier on the sacrificial material, the barrier extending along sidewalls of the at least one contact via from a top surface of the sacrificial material down to a bottom surface of the sacrificial material proximal to the contacts such that the contacts remain exposed. A conductive material is deposited in the at least one contact via down to the contacts to form stacked contacts having the hard mask on sides thereof. The sacrificial material is removed.

BACKGROUND

The present invention generally relates to linerless contacts insemiconductor devices, and more particularly to semiconductor deviceshaving stacked contacts without a liner for having metal-to-metalcontact interfaces.

Liners around contacts can improve isolation between regions of adevice. However, liners also impair current transfer between stackedcontacts, as well as any other contacts through which current isintended to flow. The liner in such cases adds resistances to thecurrent flow. The resistance decreases the efficiency of deviceoperation, resulting in greater power draw and reduced switchingperformances.

SUMMARY

In accordance with an embodiment of the present invention, a method forforming stacked contacts on a semiconductor device is presented. Themethod includes opening at least one contact via through a sacrificialmaterial down to contacts. Sides of the at least one contact via arelined by selectively depositing a barrier on the sacrificial material,the barrier extending along sidewalls of the at least one contact viafrom a top surface of the sacrificial material down to a bottom surfaceof the sacrificial material proximal to the contacts such that thecontacts remain exposed. A conductive material is deposited in the atleast one contact via down to the contacts to form stacked contactshaving the hard mask on sides thereof. The sacrificial material isremoved.

In accordance with an embodiment of the present invention, a method forforming stacked contacts on a semiconductor device is presented. Themethod includes forming sacrificial material over the semiconductordevice. A mask is patterned over the sacrificial material. At least onecontact via is opened through the sacrificial material down to contactsaccording to the mask. Sides of the at least one contact via are linedby selectively depositing a barrier on the sacrificial material, thebarrier extending along sidewalls of the at least one contact via from atop surface of the sacrificial material down to a bottom surface of thesacrificial material proximal to the contacts such that the contactsremain exposed. A conductive material is deposited in the at least onecontact via down to the contacts to form stacked contacts having thehard mask on sides thereof. The sacrificial material is removed and aninterlevel dielectric is formed around the stacked contacts.

In accordance with another embodiment of the present invention, asemiconductor device with stacked contacts is presented. Thesemiconductor includes a device layer with device components. The devicecomponents include a gate structure disposed on a substrate including agate conductor, a source/drain region on each of opposing sides of thegate structure and a trench contact contacting each of the source/drainregions. A stacked contact layer including at least one stacked contactin metal-to-metal contact with at least one of the device components andhaving a hard mask on sides of the at least one stacked contact.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following description will provide details of preferred embodimentswith reference to the following figures wherein:

FIG. 1 is a cross-sectional view showing a semiconductor device withgate structures on a substrate, in accordance with an embodiment of thepresent invention;

FIG. 2 is a cross-sectional view showing a sacrificial layer and maskformed over a semiconductor device with gate structures on a substrate,in accordance with an embodiment of the present invention;

FIG. 3 is a cross-sectional view showing contact vias formed through asacrificial layer over a semiconductor device with gate structures on asubstrate, in accordance with an embodiment of the present invention;

FIG. 4 is a cross-sectional view showing a hard mask corresponding tocontact vias removed from over a semiconductor device with gatestructures on a substrate, in accordance with an embodiment of thepresent invention;

FIG. 5 is a cross-sectional view showing a sacrificial layer withcontact vias lined with a selectively deposited barrier/liner over asemiconductor device with gate structures on a substrate, in accordancewith an embodiment of the present invention;

FIG. 6 is a cross-sectional view showing a conductive material depositedacross a semiconductor device over gate structures on a substrate, inaccordance with an embodiment of the present invention;

FIG. 7 is a cross-sectional view showing a conductive material,sacrificial layer and hard mask planarized to form stacked contacts overa semiconductor device with gate structures on a substrate, inaccordance with an embodiment of the present invention;

FIG. 8 is a cross-sectional view showing stacked contacts with asacrificial layer removed over a semiconductor device with gatestructures on a substrate, in accordance with an embodiment of thepresent invention;

FIG. 9 is a cross-sectional view showing an isolation material withair-gaps between stacked contacts over a semiconductor device with gatestructures on a substrate, in accordance with an embodiment of thepresent invention;

FIG. 10 is a cross-sectional view showing an isolation material betweenstacked contacts over a semiconductor device with gate structures on asubstrate, in accordance with an embodiment of the present invention;and

FIG. 11 is a block/flow diagram showing a system/method for forming asemiconductor device with linerless stacked contacts, in accordance withan embodiment of the present invention.

DETAILED DESCRIPTION

According to an embodiment of the present invention, contacts arestacked over structures of a semiconductor device such that the contactshave a metal-to-metal interface with the device structures.

A sacrificial layer is formed over the semiconductor device. Contactvias are patterned into the sacrificial layer down to contacts of thesemiconductor device according to a patterned mask. The contact vias arelined by selectively depositing a barrier material on the sacrificiallayer. Selective deposition formed the barrier material on surfaces ofthe sacrificial layer, such as, e.g., interior walls of the contact viaswhile avoid forming a hard mask layer on, e.g., conductive materialssuch as contacts within the semiconductor device at bottoms of thecontact vias.

The contact vias are filled with a conductive material to form stackedcontacts over the semiconductor device. Because of the selectivedeposition of the hard mask on the sacrificial layer, the stackedcontacts are formed with a metal-to-metal interface with the preexistingcontacts within the semiconductor device. The sacrificial layer can beremoved and replaced with an isolation material to isolate the stackedcontacts from each other. Thus, current can be supplied through thestacked contacts without interference by a liner/barrier layer reducingresistance due to the metal-to-metal interface. Thus, the semiconductordevice can be operated with reduced power draw and improved switchingperformance.

Exemplary applications/uses to which the present invention can beapplied include, but are not limited to: contacts in semiconductormanufacturing, such as, e.g., stacked contacts over transistor devices.

It is to be understood that aspects of the present invention will bedescribed in terms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps can be varied within the scope of aspects of the presentinvention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements can also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements can be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments can include a design for an integrated circuitchip, which can be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer can transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein can be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., SiGe. These compounds includedifferent proportions of the elements within the compound, e.g., SiGeincludes Si_(x)Ge_(1-x), where x is less than or equal to 1, etc. Inaddition, other elements can be included in the compound and stillfunction in accordance with the present principles. The compounds withadditional elements will be referred to herein as alloys.

Reference in the specification to “one embodiment” or “an embodiment”,as well as other variations thereof, means that a particular feature,structure, characteristic, and so forth described in connection with theembodiment is included in at least one embodiment. Thus, the appearancesof the phrase “in one embodiment” or “in an embodiment”, as well anyother variations, appearing in various places throughout thespecification are not necessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This can be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, can be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the FIGS. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the FIGS. For example, if the device in theFIGS. is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device can be otherwise oriented (rotated 90degrees or at other orientations), and the spatially relativedescriptors used herein can be interpreted accordingly. In addition, itwill also be understood that when a layer is referred to as being“between” two layers, it can be the only layer between the two layers,or one or more intervening layers can also be present.

It will be understood that, although the terms first, second, etc. canbe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, a first element discussed belowcould be termed a second element without departing from the scope of thepresent concept.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 1, a cross-sectional viewshowing a semiconductor device with gate structures on a substrate isdepicted according to an embodiment of the present invention.

According to an embodiment of the present invention, a semiconductordevice 100 is provided on with a substrate 102. The substrate 102 caninclude any suitable substrate structure, e.g., a bulk semiconductor, asemiconductor-on-insulator (SOI) substrate, etc. In one example, thesubstrate 102 can include a silicon-containing material. Illustrativeexamples of Si-containing materials suitable for the substrate 102 caninclude, but are not limited to, Si, SiGe, SiGeC, SiC and multi-layersthereof. Although silicon is the predominantly used semiconductormaterial in wafer fabrication, alternative semiconductor materials canbe employed as additional layers, such as, but not limited to,germanium, gallium arsenide, gallium nitride, silicon germanium, cadmiumtelluride, zinc selenide, etc.

Structures, such as, e.g., gate structures 110, are formed on thesubstrate 102. The gate structures 110 can form transistors, such as,e.g., field-effect transistors (FET). According to one possibleembodiment, the gate structures 110 corresponding to fin-type FETs (finFETs).

The gate structures 110 can be formed using deposition, photolithographyand a selective etching process. In one embodiment, a gate last processis used to pattern a gate replacement structure on the substrate 102.Spacers 118 can then be formed on opposing sides the gate replacementstructure by, e.g., conformal deposition of a spacer material, such asoxides, nitrides or oxynitrides, among other dielectric materials. Thespacer material is then anisotropically removed by an etch process thatremoves the conformal layer from all of the surfaces of the replacementgate structure and any other device 100 structures except for thesidewalls of the replacement gate structure to form vertical sidewallspacers 118. The gate replacement structure is then replaced with a gatedielectric 114, gate conductor 112 and gate cap 116. However, a gatefirst process can also be used in which the gate dielectric 114, gateconductor 112 and gate cap 116 of the gate structure 110 is formedfirst, and then the spacers 118 are formed on opposing sides thereof.

Next, gate dielectric 114 is formed within the gate structure 110utilizing, e.g., a deposition process. Alternatively, gate dielectric114 may be formed by a thermal oxidation, nitridation or oxynitridationprocess. Combinations of the aforementioned processes may also be usedin forming the gate dielectric 114. The gate dielectric may be composedof any conventional dielectric including, but not limited to: SiO₂;Si₃N₄; SiON; temperature sensitive high-k dielectrics such as TiO₂,Al₂O₃, ZrO₂, HfO₂, Ta₂O₅, La₂O₃; and other like oxides includingperovskite-type oxides. Gate dielectric 114 may also include anycombination of the aforementioned dielectric materials.

After gate dielectric 114 has been formed, the gate conductor 112 isformed within a cavity defined by the gate dielectric 114 between thespacers 118 using, e.g., a deposition process (such as CVD,plasma-assisted CVD, plating, sputtering and etc.) followed byplanarization. Gate conductor 112 may include any conductive materialincluding but not limited to: polysilicon; a conductive elemental metalsuch as W, Cu, Pt, Ag, Au, Ru, Ir, Rh, and Re; alloys that include atleast one of the aforementioned conductive elemental metals; silicidesor nitrides that include at least one of the above-mentioned conductiveelemental metals; and combinations thereof may be employed. When acombination of conductive elements is employed, an optional diffusionbarrier material such as TaN or WN may be formed between the conductivematerials.

In one embodiment, a contact cap (hereafter referred to as a dielectriccap 116) may be used to complete each of the gate structures 110. Thedielectric cap 116 may be formed by first depositing a dielectric hardmask material, like SiN or SiO₂, atop each gate conductor 112 using,e.g., a deposition process and planarization. The dielectric cap 116 maybe removed by a wet or dry etch prior to the silicidation process.Alternatively, the gate structures 110 can be formed by other patterningtechniques such as spacer image transfer.

Source/drain regions 104 can be formed on opposing sides of each gatestructure 110, for example, abutting the spacers 118, using, e.g.,epitaxial growth of a conductive material. The source/drain regions 104include, e.g., a silicon containing material, such as silicon, silicongermanium, or silicon doped with carbon (Si:C). The material of thesource/drain regions 104 can be doped via ion implantation for p-typedoping or n-type doping of the source/drain regions 104. However, inanother possible embodiment, the source/drain regions 104 can be formedby forming an insitu doped material on the exposed portions of finstructures using epitaxy. Other conductive materials are alsocontemplated.

Contacts 106 are formed on the source/drain regions 104. The contacts106 can include any suitable conductive material, such aspolycrystalline or amorphous silicon, germanium, silicon germanium, ametal (e.g., tungsten, titanium, tantalum, ruthenium, zirconium, cobalt,copper, aluminum, lead, platinum, tin, silver, gold), a conductingmetallic compound material (e.g., tantalum nitride, titanium nitride,tungsten silicide, tungsten nitride, ruthenium oxide, cobalt silicide,nickel silicide), carbon nanotube, conductive carbon, graphene, or anysuitable combination of these materials. The conductive material mayfurther comprise dopants that are incorporated during or afterdeposition.

According to one possible embodiment, a contact liner 108 can be formedbetween the source/drain regions 104 and the contacts 106. The contactliner 108 can include, e.g., a dielectric

The trenches may optionally be lined with a conventional liner material,e.g., an oxide, and then CVD or another like deposition process is usedto fill the trench with polysilicon or another like STI dielectricmaterial, including, e.g., a suitable dielectric including, e.g., anoxide or nitride. The STI dielectric may optionally be densified afterdeposition to form the contact liner 108. The contacts 106 can then beformed within the lined trench on the contact liner 108.

One or more capping layers 120 can be optionally deposited over thesemiconductor device 100, including the gate structures 110 and thecontacts 106. Such capping layer(s) 120 include a dielectric material toprotect the contacts 106 and gate structures 110 from subsequentprocessing, such as, e.g., selective deposition as will be describedbelow. For example, the capping layer(s) 120 can include, e.g., an oxideor a nitride, such as, silicon nitride (SiN), silicon dioxide (SiO₂),among other materials to the contacts 106 and gate structures 110.

Referring now to FIG. 2 is a cross-sectional view showing a sacrificiallayer and mask formed over a semiconductor device with gate structureson a substrate is depicted according to an embodiment of the presentinvention.

A sacrificial layer 122 is formed over the semiconductor device 100. Thesacrificial layer 122 can be later replaced. As a result, thesacrificial layer 122 can include a suitable material for processing andlater removal, such as, amorphous silicon (α-Si). Amorphous silicon is anon-crystalline silicon that can be easily and cheaply deposited for useas a sacrificial layer 122. The sacrificial layer 122 can be formed bydeposition, such as, e.g., chemical vapor deposition (CVD) or othersuitable deposition process.

A mask 124 can be formed on the sacrificial layer 122. The mask 124 ispatterned with openings 126 corresponding to contact locations.Specifically, a pattern is produced by applying a photoresist orphotoresist stack to the surface of the mask 124; exposing thephotoresist to a pattern of radiation; and then developing the patterninto the photoresist utilizing a resist developer. Once the patterningof the photoresist is completed, the sections covered by the photoresistare protected while the exposed regions are removed using a selectiveetching process that removes the unprotected regions as well as theunderlying portions of the mask 124 to form openings 126 down to thesacrificial layer 122.

Referring now to FIG. 3 is a cross-sectional view showing contact viasformed through a sacrificial layer over a semiconductor device with gatestructures on a substrate is depicted according to an embodiment of thepresent invention.

Contact vias 130 are formed within the sacrificial layer 122 down to adevice contact, such as, e.g., a contact 106, a gate conductor 112, orcombinations thereof. As such, the contact vias 130 can be formed usinga selective etch process, such as, reactive ion etching (RIE), or othersuitable etch process. The etching is performed selective to thematerial of the mask 124, the contacts 106, gate conductor 112, gatespacers 118, as well as any other material for which etching is notdesired. Thus, the contact via 130 is etched into the sacrificial layer122 according to the pattern of the openings 126, including through thecapping layer(s) 120.

As a result, material of the contacts 106 and/or the gate conductors 106are exposed. The contact via 130, therefore, extends from a top surfaceof the sacrificial layer 122 down to a bottom surface of the sacrificiallayer 122, adjacent to the capping layer(s) 120. The etch process canalso be used to extend the contact via 130 through the capping layer(s)120 to reach a conductive material, such as, e.g., the contacts 106and/or the gate conductor 112. To reach the gate conductor 112, thecontact via 130 is also etched through the dielectric cap 116. As aresult, the etch process etches selective to the materials of thecontacts 106 and the gate conductor 112. Also, to prevent damage to thespacers 118 when etching through the dielectric cap 116, the etching canbe performed selective to the material of the spacers 118 as well.

The resulting contact via 130 exposes conductive material in locationsof the device 100 where stacked contacts will be formed. The contactvias 130 can extend through the sacrificial layer 122 with side wallsthat are substantially perpendicular to the top and/or bottom surface ofthe sacrificial layer. However, the etch process may also result in thecontact vias 130 having a tapered profile where the sidewalls are slopedto narrow the contact vias 103 towards the contacts 106 and gateconductors 112. Thus, the contact vias 130 can have a top opening at thetop surface of the sacrificial layer 122 that is wider than a bottomopening at the contacts 106 and/or gate conductors 112.

The etching can be performed in a single etching step with a chemistrythat is selective to each of the mask 124, the contacts 106, gateconductor 112 and gate spacers 118. Alternatively, multiple etch stepscan be performed to etch the sacrificial layer 122 selective to othermaterials exposed at the corresponding step.

Referring now to FIG. 4 is a cross-sectional view showing a hard maskcorresponding to contact vias removed from over a semiconductor devicewith gate structures on a substrate is depicted according to anembodiment of the present invention.

Upon opening the contact vias 130, the mask 124 can be removed from thesacrificial layer 122. The mask 124 is removed using, e.g., aplanarization, polishing or grinding step to provide a planar topsurface of the sacrificial layer 122. According to one possibleembodiment, the mask 124 is removed using, e.g., chemical mechanicalplanarization (CMP) to planarize material down to a planar surface ofthe sacrificial layer 122. In an alternate embodiment the mask 124 canbe removed by chemical etching, wet or dry, to leave the 122 surfaceclear of residues.

Referring now to FIG. 5 is a cross-sectional view showing a sacrificiallayer with contact vias lined with a barrier/liner over a semiconductordevice with gate structures on a substrate is depicted according to anembodiment of the present invention.

According to an embodiment of the present invention, a barrier or liner132 is used to line interior walls of the contact vias 130. However, thebarrier 132 is formed to leave the contacts 106 and gate conductors 112exposed. As a result, barrier 132 is selectively deposited on thesacrificial layer 122. The selective deposition of the barrier 132 isselective to the capping layer(s) 120 and the material of the contacts106 and gate conductors 112. For example, the barrier 132 can beselectively deposited using, e.g., atomic layer deposition (ALD) to forma conformal layer of the barrier 132 material across the sacrificiallayer 122.

As a result of the selective deposition process, the barrier 132 isformed on the sacrificial material 122, but not on any other material.For example, the deposition can be performed such that the barrier 132is deposited on the sacrificial layer 122 but cannot be formed on thecapping layer(s) 120, contacts 106, spacers 118, gate dielectric 114 orgate conductor 112. In particular, where the sacrificial layer 122 ismade of amorphous silicon, the selective deposition is can be configuredto only deposit the barrier 132 on amorphous silicon. However, thedeposition of the barrier 132 can be selective to any combination ofmaterials used in the device 100 such that the contact vias 130 arelined with the barrier 132 but conductive materials remain exposed. As aresult, the selective deposition process can also include deposition onother materials of the device selective to conductive materials used inthe contacts 106 and gate conductor 112. Thus, according to someembodiments, the barrier 132 can be deposited on the sacrificial layer122 as well as the capping layer(s) 120 selective to the contacts 106and gate conductor 112.

The barrier 132 forms a lining along the sides of the contact vias 130with a uniform thickness on interior surfaces of the contact via 130sidewalls due to, e.g., conformal deposition. Accordingly, the barrier132 follows the profile of the contact vias 130. For example, thecontact vias 130 can have a tapered cross section where a top opening ofthe contact via 130 at the top surface of the sacrificial layer 122 iswider than a bottom opening below the sacrificial layer 122 proximal tothe device 100. The thickness of the barrier 132 can include anysuitable thickness, such as, e.g., about 1 nanometer and below.

The barrier 132 can include a suitable diffusion barrier material forimproving the isolation of subsequently formed contacts in the contactvias 130. As such, the barrier 132 can include a suitable selectivelydeposited dielectric, such as, an oxide, a nitride, an oxynitride amongother compounds, including, e.g., SiO₂ or Al₃N₄, or alternatively high-kdielectrics such as oxides of Ti, Ta, Zr, Al or combinations thereof.According to one embodiment, the barrier 132 includes, e.g., titaniumnitride (TiN).

While the barrier 132 is selectively deposited on the sacrificial layer122, there can include overgrowth of the barrier 132 onto the cappinglayer(s) 120. The overgrowth results in the barrier 132 extending downpast the bottom surface of the sacrificial layer 122 on sides of thecapping layer(s) 120. However, the capping layer(s) 120 is of such athickness as to prevent full overgrowth down to a conductive material,e.g., of the contacts 106 or the gate conductor 112. As a result, thecapping layer(s) 120 limits the barrier 132 to a partial overgrowth,such that the barrier 132 stops short of the contacts 106 and gateconductors 112.

The overgrowth of the barrier 132 can result from isotropic growth ofthe barrier 132 material during selective deposition. As a result, asthe barrier 132 is deposited, the barrier 132 grows in all directions,including a direction perpendicular to the thickness of the barrier 132from the sides of the contact vias 130. Thus, the barrier 132 can growduring selective deposition over a portion of, e.g., the cappinglayer(s) 120 by growing perpendicular to the thickness of the barrier132 and parallel to sidewalls of the contact vias 130, thus extendingpast the bottom surface of the sacrificial layer 122. However, thedegree of overgrowth is limited by the thickness of the depositedbarrier layer 132. Accordingly, the selective deposition can be suchthat overgrowth of the barrier 132 is limited to partial overgrowth ontothe capping layer(s) 120 by limiting the thickness of the depositedmaterial of the barrier 132. For example, the barrier 132 can bedeposited to a thickness less than a thickness of the capping layer(s)120. However, other methods of limiting overgrowth of the barrier 132 tothe barrier 132 from extending down to the contacts 106 and the gateconductors 112 are contemplated.

Referring now to FIG. 6 is a cross-sectional view showing a conductivematerial deposited across a semiconductor device over gate structures ona substrate is depicted according to an embodiment of the presentinvention.

The contact vias 130 are filled with a contact material 134 to contactthe contacts 106 and gate conductors 112 exposed by the contact vias130. As a result, the contact material 134 fills down to the exposedcontacts 106 and gate conductors 112 to form an interface with thematerial of the exposed contacts 106 and gate conductors 112. To formthe interface, the contact material 134 can be bulk filled over thesemiconductor device 100 using, e.g., a deposition process, such as,CVD.

The contact material 134 can include, e.g., conductive materials suchas, e.g., metals including tungsten (W), copper (Cu), aluminum (Al),silver (Ag), gold (Au), and alloys thereof, as well as other conductivematerials including doped semiconductors. In one embodiment, both thecontact material 134 and material of the contacts 106 and the gateconductors 112 include a metal such that the contact material 134 formsa metal-to-metal (MTM) interface with the exposed contacts 106 and gateconductors 112 without a liner at the interface. Thus, resistancebetween the contact material 134 and contacts 106 and gate conductors112 can be reduced for more efficient operation and better performance.

Referring now to FIG. 7 is a cross-sectional view showing a conductivematerial, sacrificial layer and hard mask planarized to form stackedcontacts over a semiconductor device with gate structures on a substrateis depicted according to an embodiment of the present invention.

The sacrificial layer 122 is re-exposed by recessing the contactmaterial 134 and the hard mask 124 over the sacrificial layer 122. Thecontact material 134 and the hard mask 124 can be recessed using, e.g.,a planarization, polishing or grinding step to provide a planar topsurface of the sacrificial layer 122 with stacked contacts 136 formedtherein at the locations of the contact vias described above. Accordingto one possible embodiment, contact material 134 and the hard mask 124can be recessed using, e.g., chemical mechanical planarization (CMP) toplanarize material down to a planar surface of the sacrificial layer122. As a result, stacked contacts 136 are formed within the sacrificiallayer 122 over the semiconductor device 100 with MTM interfaces withcontacts 106 and gate conductors 112.

Referring now to FIG. 8 is a cross-sectional view showing stackedcontacts with a sacrificial layer removed over a semiconductor devicewith gate structures on a substrate is depicted according to anembodiment of the present invention.

The sacrificial layer 122 is removed from over the semiconductor device100 to leave stacked contact structures 140 formed on selected contacts106 and gate conductors 112. The stacked contact structures 140 include,e.g., the stacked contacts 136 as well as barriers 138 formed previouslyon the sides of the contact vias 130.

The sacrificial layer 122 is removed using, e.g., a selective etchprocess, including, e.g., an isotropic etch process such as a wetchemical etch or a dry etch. For example, the etchant may be a corrosiveliquid or a chemically active ionized gas, such as a plasma. However, ananisotropic etch process, such as, e.g., RIE, is also contemplated. Theetch chemistry removes the sacrificial layer 122 selective to thebarrier 138, the stacked contacts 136 and the capping layer(s) 120, aswell as any other exposed materials, to remove the sacrificial layer122.

As a result, the barrier 138 remains on the sides of the stackedcontacts 136 to form liners 138 for each of the stacked contacts 136.Therefore, the stacked contact structures 140 include the barriers 138to better isolate stacked contacts 136.

Referring now to FIG. 9 is a cross-sectional view showing an isolationmaterial with air-gaps between stacked contacts over a semiconductordevice with gate structures on a substrate is depicted according to anembodiment of the present invention.

According to an embodiment of the present invention, the stacked contactstructures 140 are further isolated from each other with an interleveldielectric layer (ILD) 150 having air-gaps 154 formed therein. The ILD150 is formed by conformally depositing a dielectric material across thesemiconductor device 100 using, e.g., ALD. As a result, the dielectricmaterial extends outwards from each of the stacked contact structures140 and from the capping layer(s) 120 through continued deposition.According to one embodiment, deposition of the dielectric material iscontinued until the dielectric material extends from sides of thestacked contact structures 140 such that dielectric material on sides ofadjacent stacked contact structures 140 meet and form a seam 152.

According to one embodiment, the sides of the stacked contact structures140 are sloped such that a top surface of the stacked contact structures140 opposite the semiconductor device 100 is wider than a bottom surfaceadjacent the semiconductor device 100. Thus, the top surfaces of thestacked contact structures 140 are separated by less space betweenadjacent stacked contact structures than the bottom portions. As aresult, conformal deposition of the ILD 150 leads to a top portion ofthe ILD 150 proximal to the top surface of the stacked contactstructures 140 opposite to the semiconductor device 100 closing offbefore a lower portion beneath the top portion. As a result, the seam152 forms at the top portion, closing off an air-gap 154 in the lowerportion beneath the seam 152. As a result, air-gaps 154 are formedbetween adjacent stacked contact structures 140 to improve isolationbetween each of the stacked contact structures.

Following deposition of the dielectric material for the ILD 150, aplanarization processes is conducted to provide an upper surface,wherein the upper surface of the ILD 150 is coplanar with the uppersurface of the stacked contact structures 140. The planarization of theILD 150 may be provided by chemical mechanical planarization.

The ILD 150 may be selected from the group consisting of siliconcontaining materials such as SiO₂, Si₃N₄, SiO_(x)N_(y), SiC, SiCO,SiCOH, and SiCH compounds, the above-mentioned silicon containingmaterials with some or all of the Si replaced by Ge, carbon dopedoxides, inorganic oxides, inorganic polymers, hybrid polymers, organicpolymers such as polyamides or SiLK™, other carbon containing materials,organo-inorganic materials such as spin-on glasses andsilsesquioxane-based materials, and diamond-like carbon (DLC), alsoknown as amorphous hydrogenated carbon, α-C:H). Additional choices forthe ILD 150 include any of the aforementioned materials in porous form,or in a form that changes during processing to or from being porousand/or permeable to being non-porous and/or non-permeable.

Referring now to FIG. 10 is a cross-sectional view showing an isolationmaterial between stacked contacts over a semiconductor device with gatestructures on a substrate is depicted according to an embodiment of thepresent invention.

According to an embodiment of the present invention, the stacked contactstructures 140 are further isolated from each other with an interleveldielectric layer (ILD) 160. The ILD 160 may be deposited using at leastone of spinning from solution, spraying from solution, chemical vapordeposition (CVD), plasma enhanced CVD (PECVD), sputter deposition,reactive sputter deposition, ion-beam deposition, and evaporation.Following deposition of the dielectric material for the ILD 160, aplanarization processes is conducted to provide an upper surface,wherein the upper surface of the ILD 160 is coplanar with the uppersurface of the stacked contact structures 140. The planarization of theILD 160 may be provided by chemical mechanical planarization.

Referring now to FIG. 11, a block/flow diagram showing a system/methodfor forming a semiconductor device with linerless stacked contacts isdepicted according to an embodiment of the present invention.

At block 1101, form a sacrificial material over the semiconductordevice.

At block 1102, pattern a mask over the sacrificial material.

At block 1103, open at least one contact via through the sacrificialmaterial down to contacts according to the mask.

At block 1104, line sides of the at least one contact via are lined byselectively depositing a barrier on the sacrificial material, thebarrier extending along sidewalls of the at least one contact via from atop surface of the sacrificial material down to a bottom surface of thesacrificial material proximal to the contacts such that the contactsremain exposed.

At block 1105, deposit a conductive material in the at least one contactvia down to the contacts to form stacked contacts having the barrier onsides thereof.

At block 1106, remove the sacrificial material.

At block 1107, form an interlevel dielectric around the stackedcontacts.

Having described preferred embodiments of a system and method (which areintended to be illustrative and not limiting), it is noted thatmodifications and variations can be made by persons skilled in the artin light of the above teachings. It is therefore to be understood thatchanges may be made in the particular embodiments disclosed which arewithin the scope of the invention as outlined by the appended claims.Having thus described aspects of the invention, with the details andparticularity required by the patent laws, what is claimed and desiredprotected by Letters Patent is set forth in the appended claims.

What is claimed is:
 1. A semiconductor device with stacked contacts, thesemiconductor device comprising: a device layer with device components,the device components including: a gate structure including a gateconductor disposed on a substrate; a source/drain region on each ofopposing sides of the gate structure; a trench contact contacting eachof the source/drain regions; and a contact material in metal-to-metalcontact with the trench contact.
 2. The semiconductor device of claim 1,further comprising a sacrificial layer on the device layer, and abarrier layer on sidewalls of a via through the sacrificial layer,wherein the barrier layer separates the contact material is from thesacrificial layer.
 3. The semiconductor device of claim 2, furthercomprising a dielectric capping layer between the sacrificial layer andthe device layer.
 4. The semiconductor device of claim 3, wherein thedielectric capping layer is made of a dielectric material selected fromthe group consisting of silicon nitride (SiN) and silicon dioxide(SiO₂).
 5. The semiconductor device of claim 3, wherein at least aportion of the dielectric capping layer is in direct contact with thecontact material
 6. The semiconductor device of claim 5, furthercomprising a spacer between the source/drain region and gate structure.7. The semiconductor device of claim 5, wherein the barrier layer ismade of titanium nitride (TiN).
 8. A semiconductor device, comprising: asource/drain region on a substrate; a trench contact on the source/drainregion; a contact material in metal-to-metal contact with the trenchcontact; and a barrier layer on a portion of the contact material. 9.The semiconductor device as recited in claim 1, wherein the trenchcontact is a conductive metal selected from the group consisting oftungsten, titanium, tantalum, ruthenium, cobalt, and platinum.
 10. Thesemiconductor device of claim 9, wherein the contact material is aconductive metal selected from the group consisting of copper (Cu),aluminum (Al), silver (Ag), and gold (Au).
 11. The semiconductor deviceof claim 10, wherein the barrier layer is made of titanium nitride(TiN).
 12. The semiconductor device of claim 11, further including adielectric capping layer on a portion of the trench contact, and asacrificial layer on the dielectric capping layer.
 13. The semiconductordevice of claim 12, wherein the barrier layer is a conformal layerbetween the sacrificial layer and the contact material.
 14. Asemiconductor device with stacked contacts, the semiconductor devicecomprising: a device layer with device components, the device componentsincluding: a gate structure disposed on a substrate including a gateconductor; a source/drain region on each of opposing sides of the gatestructure; a trench contact contacting each of the source/drain regions;and a stacked contact layer including at least one stacked contact inmetal-to-metal contact with at least one of the device components andhaving a barrier on sides of the at least one stacked contact.
 15. Thesemiconductor device of claim 14, further including an interleveldielectric around the at least one stacked contact in the stackedcontact layer.
 16. The semiconductor device as recited in claim 15,further including a dielectric layer between the semiconductor deviceand the interlevel dielectric, wherein the barrier is disposed betweenthe sides of the at least one stacked contact and the interleveldielectric selective to the dielectric layer.
 17. The semiconductordevice of claim 16, wherein the barrier includes a nitride.
 18. Thesemiconductor device of claim 17, further including air gaps within aninterlevel dielectric between each of the at least one stacked contact.